Project Id BITS025F001438
Project Detail
Project Title Development and Analysis of ß-Gallium Oxide-based Junction Barrier Schottky Diodes (JBSD)
Senior Supervision Team (BITS)
Supervisor name and Title Apurba Chakraborty School or Department (or company, if applicable) BITS PILANI, GOA CAMPUS
Email ID apurbac@goa.bits-pilani.ac.in
URL for more info https://www.bits-pilani.ac.in/goa/apurba-chakraborty/
a) Are you currently supervising a BITS or RMIT HDR student? YES
Please comment how many you are supervising 2
b) Have you supervised an offshore candidate before? NO
If no, what support structures do you have in place?
If yes, please elaborate
Senior Supervision Team (RMIT)
Supervisor name and Title Dr Hiep Tran School or Department (or company, if applicable) STEM
Email ID hiep.tranlengoc@rmit.edu.au
URL for more info https://www.rmit.edu.au/profiles/t/hiep-tranlengoc
a) Are you currently supervising a BITS or RMIT HDR student? YES
Please comment how many you are supervising 3
b) Have you supervised an offshore candidate before? NO
If no, what support structures do you have in place?
If yes, please elaborate N
Other Supervisors (BITS)
Supervisor name and Title Professor RAHUL KUMAR School or Department (or company, if applicable) BITS PILANI, PILANI CAMPUS
Phone Number (Optional) +919958161442 Email ID rahul.kumar@pilani.bits-pilani.ac.in
URL for more info https://www.bits-pilani.ac.in/pilani/rahul-kumar/
Other Supervisors (BITS)
Supervisor name and Title A/Prof James Partridge School or Department (or company, if applicable) STEM
Phone Number (Optional) +61 3 9925 2865 Email ID james.partridge@rmit.edu.au
URL for more info https://www.rmit.edu.au/profiles/p/james-partridge
Field of Research (For Codes)
Research CodeResearch AreaResearch Percent
401603Compound semiconductors30.00
401805Nanofabrication, growth and self assembly70.00
Project Description
1. State of the Art: ß-Gallium Oxide (ß-Ga2O3)-based devices have gained significant interest for next-generation power electronics due to their superior material properties. With a high bandgap (4.4 – 4.9 eV) compared to Gallium Nitride (GaN) (3.4 eV) and Silicon Carbide (SiC) (3.2 eV), Ga2O3 enables a much higher breakdown electric field (8 MV/cm), making it an attractive candidate for power devices. The suitability of a semiconductor for power application is often evaluated using Baliga’s Figure of Merit (BFOM), which considers bandgap, breakdown electric field, and electron mobility. ß-Ga2O3 exhibits a BFOM of around 3000, which is four times higher than GaN and ten times higher than SiC, making it a strong candidate for high-power electronic applications. 2. Methodology *Device design and fabrication: •Ga2O3 will be grown via Low-Pressure Chemical Vapor Deposition (LPCVD) on industry-standard c-plane sapphire substrates. The growth process will utilise a Lindberg tube furnace with a solid gallium source, while oxygen and argon serve as the carrier gases. •NiO will also be deposited using LPCVD, with deposition conditions optimised for uniformity, crystallinity, and interface quality. •Ohmic contacts (Ti/Au) and Schottky contacts (Pt or Ni/Au) will be formed using RF magnetron sputtering. *Material characterization: •X-ray Diffraction (XRD) & Raman Spectroscopy: To analyse crystalline quality. •Atomic Force Microscopy (AFM) & Scanning Electron Microscopy (SEM): For surface morphology, grain structure, and roughness assessment. •X-ray Photoelectron Spectroscopy (XPS): To investigate chemical states, bonding configurations, and interface quality. *Electrical characterization: •Hall effect measurement: To determine carrier mobility, type, and doping concentration. •Current-Voltage (I-V) measurement: To extract diode performance metrics such as turn-on voltage, leakage current, breakdown voltage (VBR), and on-resistance (Ron). •Temperature-Dependent measurement: To investigate device performance over a wide temperature range and assess thermal stability.
Project Deliverable/Outcomes
Project Deliverables: 1. Development of NiO/Ga2O3-based Junction Barrier Schottky Diodes (JBSD) optimised for high-power electronic applications. 2. Detailed growth kinetics and device fabrication methodologies to guide future industry applications. 3. Comprehensive performance analysis of JBSD structures, including doping effects, layer thickness impact, and field plate benefits. 4. Knowledge base creation to support semiconductor research and contribute to workforce development, aligning with the Indian Semiconductor Mission (ISM). 5. Establishment of national and international collaborations for advancing Ga2O3-based semiconductor technology.
Research Impact Themes
ThemeSubtheme
Semiconductors Energy applications
SemiconductorsFabrication
SemiconductorsPower electronics
Which RMIT Sustainable Development Goal (SDG) does your project align to
INDUSTRY, INNOVATION, AND INFRASTRUCTURE
Which RMIT Enabling Impact Platform (EIP) does your project align to
ADVANCED MATERIALS, MANUFACTURING AND FABRICATION
Which RMIT Program code will this project sit under?
DR220 (ELECTRICALANDELECTRONIC)
Student Capabilities and Qualifications
Knowledge of semiconductor growth and characterization
Prior experience on semiconductor material growth and characterization
ME/M.Tech in ECE, EI, Electrical, Nanotechnology or MSc Physics/Electronics or equivalent with minimum 60% aggregate overall.
Preferred discipline of Student
Discipline
Electrical and Electronics Engineering, Power Engineering
Materials, Composites, Material Science, Functional Materials, Mettalurgical Engineering
Nanotechnology, Nanomaterials, Nanomedicine, Nanoscience
Physics, Condensed Matter Physics
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Date of Downloading : 7/13/2025 3:26:51 PM